Part Number Hot Search : 
251944 EM291903 NJM2368V 2SC1383 GDM1604 TCRT9000 T24C128 012001
Product Description
Full Text Search

MRF8S26060HR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF8S26060HR3_133792.PDF Datasheet


 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
MTM12P10 MTP12P06 MTP12P10 POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
IRF540_D ON0285 IRF540/D IRF540-D IRF540 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
MTM40N20 Power Field Effect Transistor
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
MAPL-000817-015CPC RF Power Field Effect Transistor
Tyco Electronics
MRF19125 MRF19125R3 MRF19125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF187 MRF187R3 MRF187SR3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
MTP6N10 POWER FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
MRF8S26060HR3 Channel MRF8S26060HR3 state diagram MRF8S26060HR3 schottky MRF8S26060HR3 laser diode MRF8S26060HR3 ic查尋
MRF8S26060HR3 international MRF8S26060HR3 ic marking MRF8S26060HR3 Specification of MRF8S26060HR3 替换表 MRF8S26060HR3 pitch
 

 

Price & Availability of MRF8S26060HR3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.45103192329407